Igor Lukacevic and Sanjeev K Gupta, Haiying He and Ravindra Pandey
Josip Juraj Strossmayer University of Osijek, Croatia St Xaviers College, India Valparaiso University, USA Michigan Technological University, USA
Posters & Accepted Abstracts : Biomed Res
Recent advances in the synthesis and characterization of h-BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the two-dimensional lattice. In this talk, we present a h-BN monolayer doped with Si, C or Ge, and show that dopants modify the Fermi level of the pristine h-BN monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. The doped structures can be readily characterized using the STM imaging technique. The modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current– voltage response, and spin-dependent current. We also show that the spin-polarized transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.